Analysis of the donor-acceptor recombination band in the photoluminescence spectra of CuInSe2

C. Rincon 1 Marie-Ange Arsène 2 S.M. Wasim 1 F. Voillot 2 J.P. Peyrade 2 P. Bocaranda 1 A. Albacete 2
1 Centro de Estudios de Semiconductores
2 Laboratoire de Physique des Solides
Abstract : An empirical relation is proposed to analyze the broad band observed in the photoluminescence spectra of CuInSe2 (CIS) due to donor-acceptor pair recombinations. This permits, together with the knowledge of the majority carrier concentration and the compensation ratio, the determination of the activation energy ED of the donor and EA of the acceptor levels and the mean distance R between D-A pairs. Values of the dielectric constant ϵ, ED and EA for CIS obtained with this model agree with reported data.
keyword : Copper indium selenide CuInSe2 Ternary semiconductor Photoluminescence Donor-acceptor pairs Dielectric constant
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Materials Letters, Elsevier, 1996, 29 (1-3), pp.87-90. 〈10.1016/S0167-577X(96)00133-4〉
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https://hal.univ-antilles.fr/hal-00808657
Contributeur : Pamphile Isch <>
Soumis le : vendredi 5 avril 2013 - 19:20:48
Dernière modification le : jeudi 1 mars 2018 - 01:14:11

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C. Rincon, Marie-Ange Arsène, S.M. Wasim, F. Voillot, J.P. Peyrade, et al.. Analysis of the donor-acceptor recombination band in the photoluminescence spectra of CuInSe2. Materials Letters, Elsevier, 1996, 29 (1-3), pp.87-90. 〈10.1016/S0167-577X(96)00133-4〉. 〈hal-00808657〉

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